Nd:YVO4

Nd:YVO4 crystal is one of the most efficient laser host crystal currently existing for diode laser pumped solid state lasers. Its large stimulated emission cross-section at lasing wavelength, high absorption coefficient and wide absorption bandwidth at pump wavelength, high laser induced damage threshold as well as good physical, optical and mechanical properties make Nd:YVO4 an excellent crystal for high power, stable and cost effective diode pumped solid-state lasers.

Main Features

Low lasing threshold and high slope efficiency Low dependency on pump wavelength Large stimulated emission cross-section at lasing wavelength High absorption over a wide pumping wavelength bandwidth Optically uniaxial and large birefringence emits polarized laser

Typical Applications

For Single-longitudinal-mode output and compact design Diode laser-pumped Nd:YVO4 compact laser and its frequency-doubled green, red or blue laser will be the ideal laser tools of machining, material processing, spectroscopy, wafer inspection, light show, medical diagnostics, laser printing and other most widespread applications

Specifications

Nd Dopant Level 0.1 - 5.0 atm% Standard Dimensions 3x3x3 mm3, 3x3x1 mm3, 3x3x0.5 mm3 Wavefront Distortion λ/8@ 633nm Scattering Invisible, probed with a He-Ne laser Orientation Tolerance ±0.5deg Dimensional Tolerance ±0.1mm End-faces Configuration Plano/Plano Surface Flatness λ/10 at 633 nm Surface Quality 10/5 Scratch and Dig Parallelism < 10 arc seconds Clear Aperture > Central 90% Intrinsic Loss < 0.1%cm-1

Physical Properties

Atomic Density ~1.37x1020 atoms/cm3 Crystal Structure  Zircon Tetragonal, space group D4h a=b=7.12, c=6.29 Density 4.22 g/cm3 Mohs Hardness Glass-like, ~5 Thermal Expansion Coefficient a=4.43x10-6/K, c=11.37x10-6/K

Optical Properties (typically for 1.1 atm% Nd:YVO4, a-cut crystals)

Lasing Wavelengths 914nm, 1064 nm, 1342 nm Thermal Optical Coefficient dna/dT=8.5x10-6/K, dnc/dT=3.0x10-6/K Stimulated Emission Cross-Section 25.0x10-19cm2 @1064 nm Fluorescent Lifetime 90us @808 nm, (50us @808 nm for 2atm% Nd doped) Absorption Coefficient 31.4 cm-1@808 nm Absorption Length 0.32 mm @808 nm Intrinsic Loss Less than 0.1% cm-1@1064 nm Gain Bandwidth 0.96 nm (257 GHz) @1064 nm Polarized Laser Emission p polarization, Parallel to optic axis (c-axis) Diode Pumped Optical to Optical Efficiency > 60% Crystal Class Positive uniaxial, no=na=nb, ne=nc, no=1.9573, ne=2.1652, @1064nm no=1.9721, ne=2.1858, @808nm no=2.0210, ne=2.2560, @532nm Sellmeier Equation (for pure YVO4 crystals, λ in um)  no2=3.77834+0.069736/(λ2-0.04724) - 0.0108133λ2 ne2=4.59905+0.110534/(λ2-0.04813) - 0.0122676λ2